TSM2N60SCW RPG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 600V 600MA SOT223

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 600V 600MA SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2N60SCW RPG

Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	435 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs [Max]	5 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology
Taiwan Semiconductor Corporation TSM2N60SCW RPG	Surface Mount	600 V	N-Channel	SOT-223	TO-261-4 TO-261AA	13 nC	5 Ohm	435 pF	4 V	10 V	2.5 W	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 600mA (Tc) 2.5W (Tc) Surface Mount SOT-223

Technical documentation and resources

No documents available