IXTF2N300P3

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IXYS

MOSFET N-CH 3000V 1.6A I4PAC

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IXYS

MOSFET N-CH 3000V 1.6A I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	IXTF2N300P3

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	3000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	1890 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUSi5-Pak™
Rds On (Max) @ Id, Vgs	21 Ohm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)
IXYS IXTF2N300P3	MOSFET (Metal Oxide)	1.6 A	ISOPLUSi5-Pak™	1890 pF	10 V	73 nC	N-Channel	5 V	-55 °C	150 °C	21 Ohm	Through Hole	ISOPLUS i4-PAC™	3000 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 48.29

General part information

N-Channel 3000 V 1.6A (Tc) 160W (Tc) Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available