STFI7LN80K5

Obsolete

STMicroelectronics

MOSFET N-CH 800V 5A I2PAKFP

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 800V 5A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI7LN80K5

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	1.15 Ohm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
STMicroelectronics STFI7LN80K5	TO-262-3 Full Pack I2PAK	-55 °C	150 °C	12 nC	800 V	30 V	Through Hole	270 pF	N-Channel	10 V	MOSFET (Metal Oxide)	5 A	TO-281 (I2PAKFP)	25 W	1.15 Ohm	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 5A (Tc) 25W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources