STU60N3LH5

Obsolete

STMicroelectronics

MOSFET N-CH 30V 48A IPAK

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Obsolete

STMicroelectronics

MOSFET N-CH 30V 48A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU60N3LH5

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	8.4 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package	Mounting Type	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STU60N3LH5	60 W	8.4 mOhm	30 V	3 V	1620 pF	IPAK TO-251-3 Short Leads TO-251AA	IPAK	Through Hole	MOSFET (Metal Oxide)	20 V	10 V	5 V	N-Channel	8.8 nC	48 A	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 48A (Tc) 60W (Tc) Through Hole IPAK

Technical documentation and resources