ES3JBHR5G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AA

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	ES3JBHR5G

Capacitance @ Vr, F	34 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.45 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package	Package / Case	Technology	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Qualification	Supplier Device Package	Grade
Taiwan Semiconductor Corporation ES3J M6G	600 V	150 °C	-55 °C	1.7 V	30 pF	3 A	35 ns	DO-214AB (SMC)	DO-214AB SMC	Standard	10 µA	200 mA 500 ns	Surface Mount
Taiwan Semiconductor Corporation ES3J	600 V	150 °C	-55 °C		30 pF	3 A	35 ns	DO-214AB (SMC)	DO-214AB SMC	Standard	10 µA	200 mA 500 ns	Surface Mount
Taiwan Semiconductor Corporation ES3JBHR5G	600 V	150 °C	-55 °C	1.45 V	34 pF	3 A	35 ns	DO-214AA	DO-214AA SMB	Standard	10 µA	200 mA 500 ns	Surface Mount	AEC-Q101	SMB	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources