APT47N65BC3G

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Microsemi Corporation

MOSFET N-CH 650V 47A TO247

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Microsemi Corporation

MOSFET N-CH 650V 47A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT47N65BC3G

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	7015 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Microsemi Corporation APT47N65BC3G	-55 °C	150 °C	7015 pF	MOSFET (Metal Oxide)	260 nC	20 V	3.9 V	650 V	TO-247-3	N-Channel	417 W	47 A	TO-247 [B]	Through Hole	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 47A (Tc) 417W (Tc) Through Hole TO-247 [B]

Technical documentation and resources

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