BUL128D-B

LTB

STMicroelectronics

TRANS NPN 400V 4A TO220

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LTB

STMicroelectronics

TRANS NPN 400V 4A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	BUL128D-B

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	12
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	70 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Transistor Type	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce
STMicroelectronics BUL128D-B	NPN	TO-220-3	TO-220	4 A	150 °C	Through Hole	250 µA	70 W	12	400 V	500 mV
STMicroelectronics BUL128FP	NPN	TO-220-3 Full Pack	TO-220FP	4 A	150 °C	Through Hole	100 µA	31 W		400 V	500 mV	14 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 4 A 70 W Through Hole TO-220

Technical documentation and resources