BSO215C

Obsolete

Infineon Technologies

MOSFET N/P-CH 20V 3.7A 8SO

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Obsolete

Infineon Technologies

MOSFET N/P-CH 20V 3.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	BSO215C

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds	246 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Configuration	Mounting Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	FET Feature
Infineon Technologies BSO215C	8-SOIC	3.9 mm	0.154 in	246 pF	11.5 nC	100 mOhm	2 V	N and P-Channel	Surface Mount	2 W	-55 °C	150 °C	20 V	8-SO	MOSFET (Metal Oxide)	3.7 A	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 3.7A 2W Surface Mount 8-SO

Technical documentation and resources