STTH506B

Obsolete

STMicroelectronics

DIODE GEN PURP 600V 5A DPAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

DIODE GEN PURP 600V 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STTH506B

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DPAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

600 V, 5 A Ultrafast Diode

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Average Rectified (Io)	Technology	Package / Case	Speed
STMicroelectronics STTH506B	Surface Mount	600 V	5 µA	50 ns	175 °C	DPAK	5 A	Standard	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The STTH506 is developed using ST’s Turbo 2 600 V technology. It is well-suited for use in switching power supplies and industrial applications.

Technical documentation and resources