TSM4925DCS RLG

Taiwan Semiconductor Corporation

MOSFET 2P-CH 30V 7.1A 8SOP

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Taiwan Semiconductor Corporation

MOSFET 2P-CH 30V 7.1A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4925DCS RLG

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	7.1 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power - Max [Max]	Vgs(th) (Max) @ Id	Mounting Type	Technology	Configuration	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Taiwan Semiconductor Corporation TSM4925DCS RLG	8-SOIC	3.9 mm	0.154 in	1900 pF	25 mOhm	7.1 A	30 V	2 W	3 V	Surface Mount	MOSFET (Metal Oxide)	2 P-Channel	8-SOP	33 nC	-55 °C	150 °C

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General part information

Mosfet Array 30V 7.1A (Ta) 2W Surface Mount 8-SOP

Technical documentation and resources

No documents available