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M93S66-WMN6TP

M93S66-WMN6TP

NRND
STMicroelectronics

4 KBIT (16-BIT WIDE) MICROWIRE SERIAL ACCESS EEPROM WITH BLOCK PROTECTION

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M93S66-WMN6TP

M93S66-WMN6TP

NRND
STMicroelectronics

4 KBIT (16-BIT WIDE) MICROWIRE SERIAL ACCESS EEPROM WITH BLOCK PROTECTION

Find alt

Description

General part information

M93S66-W Series

The M93S46, M93S56, M93S66 devices are Electrically Erasable PROgrammable Memories (EEPROMs) organized as 64, 128 or 256 words (one word is 16 bits), accessed through the MICROWIRE bus.The M93S46, M93S56, M93S66 can operate with a supply voltage from 2.5 V to 5.5 V over an ambient temperature range of -40 °C / +85 °C.Compatible with MICROWIRE bus serial interfaceMemory array1 Kbit, 2 Kbit or 4 Kbit of EEPROMOrganized by word (16b)Page = 4 wordsWriteByte write within 5 msPage write within 5 msReady/busy signal during programmingUser defined write protected areaHigh-speed clock: 2 MHzSingle supply voltage:2.5 V to 5.5 VOperating temperature range: -40 °C up to +85 °C.Enhanced ESD protectionMore than 4 million write cyclesMore than 200-year data retentionPackagesPDIP8 ECOPACK® 1TSSOP8 ECOPACK® 2SO8 ECOPACK® 2

Technical Specifications

Parameters and characteristics for this part

SpecificationM93S66-WMN6TP
Clock Frequency2 MHz
Memory Depth256
Memory FormatEEPROM
Memory Interface (Type)SPI
Memory Size4 Kbit
Memory TypeNon-Volatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
TechnologyEEPROM
Voltage - Supply (Maximum)5.5 V
Voltage - Supply (Minimum)2.5 V
Write Cycle Time - Page5 ms
Write Cycle Time - Word5 ms

Pricing

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CAD

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