JAN1N3766
ActiveMicrochip Technology
DIODE GEN PURP 800V 35A DO5
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JAN1N3766
ActiveMicrochip Technology
DIODE GEN PURP 800V 35A DO5
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | JAN1N3766 | 1N3766 Series |
|---|---|---|
| - | - | |
| Current - Average Rectified (Io) | 35 A | 35 A |
| Current - Reverse Leakage @ Vr | 10 µA | 10 µA |
| Grade | Military | Military |
| Mounting Type | Chassis, Stud Mount | Chassis, Stud Mount |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C | -65 C |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Qualification | MIL-PRF-19500/297 | MIL-PRF-19500/297 |
| Speed | Standard Recovery >500ns | Standard Recovery >500ns |
| Speed | 200 mA | 200 mA |
| Supplier Device Package | DO-5 | DO-5, DO-203AB |
| Supplier Device Package | - | DO-5 |
| Technology | Standard | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 54.44 | |
1N3766 Series
STD RECTIFIER DO-5 ROHS COMPLIANT: YES
| Part | Package / Case | Technology | Current - Reverse Leakage @ Vr | Qualification | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Supplier Device Package | Current - Average Rectified (Io) | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Grade | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology JAN1N3766R | DO-203AB, DO-5, Stud | Reverse Polarity, Standard | 10 µA | MIL-PRF-19500/297 | 175 ░C | -65 C | 800 V | Standard Recovery >500ns | 200 mA | DO-5 | 35 A | Chassis, Stud Mount | 1.4 V | Military | |
Microchip Technology 1N3766 | DO-203AB, DO-5, Stud | Standard | 10 µA | 175 ░C | -65 C | 800 V | Standard Recovery >500ns | 200 mA | DO-203AB | 35 A | Stud Mount | 1.4 V | DO-5 | ||
Microchip Technology JAN1N3766R | |||||||||||||||
Microchip Technology JAN1N3766 | DO-203AB, DO-5, Stud | Standard | 10 µA | MIL-PRF-19500/297 | 175 ░C | -65 C | 800 V | Standard Recovery >500ns | 200 mA | DO-5 | 35 A | Chassis, Stud Mount | 1.4 V | Military | |
Microchip Technology 1N3766R | |||||||||||||||
Microchip Technology 1N3766R | DO-203AB, DO-5, Stud | Reverse Polarity, Standard | 10 µA | 175 ░C | -65 C | 800 V | Standard Recovery >500ns | 200 mA | DO-203AB | 35 A | Stud Mount | 1.4 V | DO-5 | ||
Microchip Technology 1N3766 |
Description
General part information
1N3766 Series
Diode 800 V 35A Chassis, Stud Mount DO-5
Documents
Technical documentation and resources
No documents available