IRL40S212

Obsolete

Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRL40S212

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	137 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	231 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	FET Type
Infineon Technologies IRL40S212	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	40 V	2.4 V	231 W	1.9 mOhm	137 nC	Surface Mount	195 A	4.5 V 10 V	20 V	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 195A (Tc) 231W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources