Description
General part information
IPB024 Series
OptiMOS™ 5 100Vpower MOSFET IPB024N10N5 from Infineon is especially designed for synchronous rectification intelecomblocks including Or-ing, hotswap and battery protection as well as forserver power supplyapplications. The device has a lower RDS(on)of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB024N10N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 138 nC, 138 nC |
| Input Capacitance (Ciss) (Max) | 10200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | PG-TO263-7, D2PAK |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) | 2.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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CAD
3D models and CAD resources for this part