AUIRLR3636TRL

Obsolete

Infineon Technologies

MOSFET N-CH 60V 99A DPAK

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 99A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRLR3636TRL

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	49 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3779 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	143 W
Rds On (Max) @ Id, Vgs	6.8 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type
Infineon Technologies AUIRLR3636TRL	2.5 V	N-Channel	60 V	TO-252AA (DPAK)	3779 pF	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	50 A	143 W	49 nC	6.8 mOhm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 50A (Tc) 143W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources