SUP40012EL-GE3

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Vishay Siliconix

MOSFET N-CH 40V 150A TO220AB

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Vishay Siliconix

MOSFET N-CH 40V 150A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP40012EL-GE3

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	195 nC
Input Capacitance (Ciss) (Max) @ Vds	10930 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	1.79 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

MOSFET N-CH 40V 150A TO220AB

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs
Vishay Siliconix SUP40012EL-GE3	150 A	N-Channel	Through Hole	2.5 V	4.5 V, 10 V	150 W	195 nC	40 V	-55 °C	175 ░C	10930 pF	TO-220-3	MOSFET (Metal Oxide)	20 V	TO-220AB	1.79 mOhm

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General part information

N-Channel 40 V 150A (Tc) 150W (Tc) Through Hole TO-220AB

Technical documentation and resources