CGRB301-G

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Comchip Technology

DIODE GEN PURP 50V 3A DO214AA

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Comchip Technology

DIODE GEN PURP 50V 3A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	CGRB301-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SMB, DO-214AA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP 50V 3A DO214AA

Part	Technology	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Reverse Leakage @ Vr	Speed	Speed
Comchip Technology CGRB301-G	Standard	3 A	Surface Mount	150 °C	50 V	SMB	DO-214AA	1.1 V	DO-214AA, SMB	5 µA	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources

No documents available