SIDC24D30SIC3

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Infineon Technologies

DIODE SIC 300V 10A SAWN ON FOIL

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Unknown

Infineon Technologies

DIODE SIC 300V 10A SAWN ON FOIL

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC24D30SIC3

Capacitance @ Vr, F	600 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	Die
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	Sawn on foil
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Speed	Capacitance @ Vr, F	Technology	Mounting Type	Reverse Recovery Time (trr)	Package / Case
Infineon Technologies SIDC24D30SIC3	1.7 V	300 V	175 ░C	-55 C	200 µA	10 A	Sawn on foil	No Recovery Time	600 pF	SiC (Silicon Carbide) Schottky	Surface Mount	0 ns	Die

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 300 V 10A Surface Mount Sawn on foil

Technical documentation and resources