IXFR80N15Q

Obsolete

IXYS

MOSFET N-CH 150V 75A ISOPLUS247

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Obsolete

IXYS

MOSFET N-CH 150V 75A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR80N15Q

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	22.5 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]
IXYS IXFR80N10Q	ISOPLUS247™	Through Hole	10 V	TO-247-3	310 W	100 V	4500 pF	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	N-Channel	76 A	180 nC	15 mOhm
IXYS IXFR80N15Q	ISOPLUS247™	Through Hole	10 V	TO-247-3	310 W	150 V	4600 pF	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	N-Channel	75 A	180 nC	22.5 mOhm	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 75A (Tc) 310W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available