Specification	IPS65R650CEAKMA1

Current - Continuous Drain (Id) (Tc)	10.1 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	440 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	PG-TO251-3
Power Dissipation (Max)	86 W
Rds On (Max)	650 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPS65R650 Series

Part	Package / Case	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Rds On (Max)	Mounting Type	FET Type	Technology	Package Name
INFINEON IPS65R650CEAKMA1	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	700 V	10 V	440 pF	86 W	-40 °C	150 °C	20 V	10.1 A	23 nC	650 mOhm	Through Hole	N-Channel	MOSFET (Metal Oxide)	PG-TO251-3

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