CUHS20F40,H3F

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A US2H

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A US2H

Technical Specifications

Parameters and characteristics for this part

Specification	CUHS20F40,H3F

Capacitance @ Vr, F	300 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	2-SMD, Flat Leads
Speed	200 mA, 500 ns
Supplier Device Package	US2H
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	540 mV

Part	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Package / Case	Technology	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage CUHS20F30,H3F	150 °C	470 mV	380 pF	2-SMD Flat Leads	Schottky	Surface Mount	US2H	2 A	200 mA 500 ns	30 V	60 µA
Toshiba Semiconductor and Storage CUHS20F40,H3F	150 °C	540 mV	300 pF	2-SMD Flat Leads	Schottky	Surface Mount	US2H	2 A	200 mA 500 ns	40 V	60 µA
Toshiba Semiconductor and Storage CUHS20S30,H3F	150 °C	410 mV	390 pF	2-SMD Flat Leads	Schottky	Surface Mount	US2H	2 A	200 mA 500 ns	30 V	500 µA

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General part information

Diode 40 V 2A Surface Mount US2H

Technical documentation and resources