Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | BUL1102E | BUL1102 Series |
|---|---|---|
| - | - | |
| Current - Collector (Ic) (Max) [Max] | 4 A | 4 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 12 | 12 |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power - Max [Max] | 70 W | 70 W |
| Supplier Device Package | TO-220 | TO-220 |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 450 V | 450 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
BUL1102 Series
High voltage fast-switching NPN power transistor
| Part | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) | Supplier Device Package | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Mounting Type | Current - Collector (Ic) (Max) [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BUL1102E | 100 µA | 150 °C | 450 V | TO-220 | 70 W | 12 | NPN | Through Hole | 4 A | TO-220-3 |
STMicroelectronics BUL1102E | ||||||||||
STMicroelectronics BUL1102E |
Description
General part information
BUL1102 Series
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
Documents
Technical documentation and resources