STB16NS25T4

Obsolete

STMicroelectronics

MOSFET N-CH 250V 16A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 250V 16A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB16NS25T4

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	1270 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Power Dissipation (Max)
STMicroelectronics STB16NF25	2.5 V	Surface Mount	MOSFET (Metal Oxide)	30 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 nC	4490 pF	4 mOhm	D2PAK	14.5 A
STMicroelectronics STB16NS25T4	4 V	Surface Mount	MOSFET (Metal Oxide)	250 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		1270 pF	280 mOhm	D2PAK	16 A	20 V	80 nC	10 V	175 °C	140 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 16A (Tc) 140W (Tc) Surface Mount D2PAK

Technical documentation and resources