STB20N65M5

Active

STMicroelectronics

N-CHANNEL 650 V, 0.160 OHM TYP., 18 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

Find alt

Alpha

STB20N65M5

Active

STMicroelectronics

N-CHANNEL 650 V, 0.160 OHM TYP., 18 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

STB20N65M5 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STB20N65M5

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	36 nC, 36 nC
Input Capacitance (Ciss) (Max)	1434 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	130 W
Rds On (Max)	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	5 V

STB20N65M5 Series

N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package

Part	FET Type	Rds On (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Max)	Operating Temperature	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Technology
STMicroelectronics STB20N65M5	N-Channel	190 mOhm	5 V	650 V	TO-263 (D2PAK)	1434 pF	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	36 nC 36 nC	150 °C	18 A	130 W	25 V	Surface Mount	MOSFET (Metal Oxide)