IPB34CN10NGATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 100V 27A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 27A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB34CN10NGATMA1

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	58 W
Rds On (Max) @ Id, Vgs	34 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPB34CN10NGATMA1	Surface Mount	10 V	34 mOhm	N-Channel	MOSFET (Metal Oxide)	1570 pF	20 V	100 V	58 W	24 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	-55 °C	175 ░C	27 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 27A (Tc) 58W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources