2SC5773JR-TL-E

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Renesas Electronics Corporation

SMALL SIGNAL BIP-TRSS FOR HIGH FREQUENCY AMPLIFIER

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Renesas Electronics Corporation

SMALL SIGNAL BIP-TRSS FOR HIGH FREQUENCY AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5773JR-TL-E

Current - Collector (Ic) (Max) [Max]	80 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	10.8 GHz
Gain	11.9 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.1 dB
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	700 mW
Supplier Device Package	3-MPAK
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6 V

Small Signal Bip-TRSs for High Frequency Amplifier

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Noise Figure (dB Typ @ f)	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Gain	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Transistor Type	Mounting Type	Package / Case
Renesas Electronics Corporation 2SC5773JR-TL-E	80	3-MPAK	1.1 dB	6 V	10.8 GHz	11.9 dB	80 mA	700 mW	150 °C	NPN	Surface Mount	SC-59, SOT-23-3, TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	955	$ 0.31

General part information

Small Signal Bip-TRSs for High Frequency Amplifier

Technical documentation and resources