IXTH40N30

IXYS

MOSFET N-CH 300V 40A TO247

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IXYS

MOSFET N-CH 300V 40A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH40N30

Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Package / Case
IXYS IXTH40N30	N-Channel	220 nC	4600 pF	10 V	4 V	Through Hole	20 V	300 V	MOSFET (Metal Oxide)	TO-247 (IXTH)	-55 °C	150 °C	85 mOhm	300 W	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 8.81

General part information

N-Channel 300 V 40A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available