IXFV12N120PS

Obsolete

IXYS

MOSFET N-CH 1200V 12A PLUS220SMD

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Obsolete

IXYS

MOSFET N-CH 1200V 12A PLUS220SMD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFV12N120PS

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PLUS-220SMD
Power Dissipation (Max)	543 W
Rds On (Max) @ Id, Vgs	1.35 Ohm
Supplier Device Package	PLUS-220SMD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
IXYS IXFV12N120P	12 A	MOSFET (Metal Oxide)	103 nC	5400 pF	N-Channel	TO-220-3 Short Tab	10 V	30 V	Through Hole	-55 °C	150 °C	6.5 V	1.35 Ohm	PLUS220	1200 V	543 W
IXYS IXFV12N120PS	12 A	MOSFET (Metal Oxide)	103 nC	5400 pF	N-Channel	PLUS-220SMD	10 V	30 V	Surface Mount	-55 °C	150 °C	6.5 V	1.35 Ohm	PLUS-220SMD	1200 V	543 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1200 V 12A (Tc) 543W (Tc) Surface Mount PLUS-220SMD

Technical documentation and resources

No documents available