Specification	SI4484EY-T1-E3

Current - Continuous Drain (Id) (Ta)	4.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.8 W
Rds On (Max)	34 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

SI4484 Series

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Mounting Type	FET Type	Vgs(th) (Max)	Package Length	Package Name	Package Width	Power Dissipation (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Technology
Vishay Dale SI4484EY-T1-E3	100 V	6 V	10 V	30 nC	4.8 A	Surface Mount	N-Channel	2 V	0.154 in	8-SOIC	3.9 mm	1.8 W	20 V	-55 °C	175 °C	34 mOhm	MOSFET (Metal Oxide)

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