DS1225Y-200IND+
ActiveAnalog Devices Inc./Maxim Integrated
IC NVSRAM 64KBIT PARALLEL 28EDIP
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DS1225Y-200IND+
ActiveAnalog Devices Inc./Maxim Integrated
IC NVSRAM 64KBIT PARALLEL 28EDIP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | DS1225Y-200IND+ | DS1225Y Series |
|---|---|---|
| Access Time | 200 ns | 150 - 200 ns |
| Memory Format | NVSRAM | NVSRAM |
| Memory Interface | Parallel | Parallel |
| Memory Organization | 8 K | 8 K |
| Memory Size | 64 Kbit | 64 Kbit |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 85 °C | 70 - 85 °C |
| Operating Temperature [Min] | -40 °C | -40 - 0 °C |
| Package / Case | 0.6 in | 0.6 in |
| Package / Case | 28-DIP Module | 28-DIP Module |
| Package / Case | 15.24 mm | 15.24 mm |
| Supplier Device Package | 28-EDIP | 28-EDIP |
| Technology | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| Voltage - Supply [Max] | 5.5 V | 5.5 V |
| Voltage - Supply [Min] | 4.5 V | 4.5 V |
| Write Cycle Time - Word, Page | 200 ns | 150 - 200 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
DS1225Y Series
IC NVSRAM 64KBIT PARALLEL 28EDIP
| Part | Supplier Device Package | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Package / Case | Memory Interface | Memory Size | Write Cycle Time - Word, Page | Memory Format | Memory Organization | Technology | Mounting Type | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1225Y-200IND+ | 28-EDIP | 4.5 V | 5.5 V | Non-Volatile | 85 °C | -40 °C | 0.6 in | 28-DIP Module | 15.24 mm | Parallel | 64 Kbit | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | Through Hole | 200 ns |
Analog Devices Inc./Maxim Integrated DS1225Y-170+ | 28-EDIP | 0.6 in | 28-DIP Module | 15.24 mm | Parallel | 64 Kbit | NVSRAM | 8 K | |||||||||
Analog Devices Inc./Maxim Integrated DS1225Y-150+ | 28-EDIP | 4.5 V | 5.5 V | Non-Volatile | 70 °C | 0 °C | 0.6 in | 28-DIP Module | 15.24 mm | Parallel | 64 Kbit | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | Through Hole | 150 ns |
Analog Devices Inc./Maxim Integrated DS1225Y-200+ | 28-EDIP | 4.5 V | 5.5 V | Non-Volatile | 70 °C | 0 °C | 0.6 in | 28-DIP Module | 15.24 mm | Parallel | 64 Kbit | 200 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | Through Hole | 200 ns |
Analog Devices Inc./Maxim Integrated DS1225Y-150IND+ | 28-EDIP | 4.5 V | 5.5 V | Non-Volatile | 85 °C | -40 °C | 0.6 in | 28-DIP Module | 15.24 mm | Parallel | 64 Kbit | 150 ns | NVSRAM | 8 K | NVSRAM (Non-Volatile SRAM) | Through Hole | 150 ns |
Description
General part information
DS1225Y Series
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 200 ns 28-EDIP
Documents
Technical documentation and resources