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STPSC10H12G2-TR - STBR3012G2Y-TR

STPSC10H12G2-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 10 A, 57 NC, D2PAK-HV

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Search across all available documentation for this part.

DocumentsDatasheetAN5088+12
STPSC10H12G2-TR - STBR3012G2Y-TR

STPSC10H12G2-TR

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 10 A, 57 NC, D2PAK-HV

Deep-Dive with AI

DocumentsDatasheetAN5088+12

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.33
10$ 4.48
100$ 3.62
500$ 3.22
Digi-Reel® 1$ 5.33
10$ 4.48
100$ 3.62
500$ 3.22
Tape & Reel (TR) 1000$ 2.49
NewarkEach (Supplied on Cut Tape) 1$ 6.75
10$ 5.16
25$ 4.84
50$ 4.53
100$ 4.21
250$ 4.06
500$ 3.91
1000$ 3.90

Description

General part information

STPSC10H12G2-TR Series

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.

The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.