IXTC200N10T

Obsolete

IXYS

MOSFET N-CH 100V 101A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 100V 101A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTC200N10T

Current - Continuous Drain (Id) @ 25°C	101 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	152 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
IXYS IXTC200N10T	30 V	4.5 V	10 V	MOSFET (Metal Oxide)	101 A	-55 °C	175 ░C	6.3 mOhm	152 nC	100 V	ISOPLUS220™	ISOPLUS220™	N-Channel	9400 pF	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 101A (Tc) 160W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available