FS45MR12W1M1B11BOMA1

Obsolete

Infineon Technologies

SIC 6N-CH 1200V AG-EASY1BM-2

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Obsolete

Infineon Technologies

SIC 6N-CH 1200V AG-EASY1BM-2

Technical Specifications

Parameters and characteristics for this part

Specification	FS45MR12W1M1B11BOMA1

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds	1840 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	AG-EASY1BM-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.55 V

Part	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Infineon Technologies FS45MR12W1M1B11BOMA1	Module	Chassis Mount	1840 pF	6 N-Channel (3-Phase Bridge)	45 mOhm	62 nC	Silicon Carbide (SiC)	150 °C	-40 °C	5.55 V	1200 V	1.2 kV	25 A	AG-EASY1BM-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 25A (Tj) Chassis Mount AG-EASY1BM-2

Technical documentation and resources

No documents available