STS4DPF30L

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STMicroelectronics

MOSFET 2P-CH 30V 4A 8SOIC

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STMicroelectronics

MOSFET 2P-CH 30V 4A 8SOIC

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STS4DPF30L	STS4D Series

Configuration	2 P-Channel	2 P-Channel, 2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A	4 - 4.5 A
Drain to Source Voltage (Vdss)	30 V	30 - 60 V
Drive Voltage (Max Rds On, Min Rds On)	-	10 V
Drive Voltage (Max Rds On, Min Rds On)	-	5 V
FET Feature	-	Schottky Diode (Isolated), Logic Level Gate
FET Type	-	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	10 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC	4.7 - 16 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF	315 - 1350 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	8-SOIC	8-SOIC
Package / Case [x]	0.154 in	0.154 in
Package / Case [y]	3.9 mm	3.9 mm
Power - Max [Max]	2 W	2 W
Power Dissipation (Max)	-	2 W
Rds On (Max) @ Id, Vgs	80 mOhm	55 - 90 mOhm
Supplier Device Package	8-SOIC	8-SOIC
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	-	20 V
Vgs(th) (Max) @ Id	1 V	1 - 4 V

MOSFET N-CH 30V 4.5A 8SO

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Feature	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STS4DNFS30	2 W	10 V	5 V	N-Channel	330 pF	8-SOIC	55 mOhm	-55 °C	150 °C	4.7 nC	1 V	30 V	Schottky Diode (Isolated)	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4.5 A	20 V	Surface Mount
STMicroelectronics STS4DPF30L					1350 pF	8-SOIC	80 mOhm	-55 °C	150 °C	16 nC	1 V	30 V		MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4 A		Surface Mount	2 W	2 P-Channel
STMicroelectronics STS4DNF60					315 pF	8-SOIC	90 mOhm	-55 °C	150 °C		4 V	60 V	Logic Level Gate	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4 A		Surface Mount	2 W	2 N-Channel (Dual)	10 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 4A 2W Surface Mount 8-SOIC

Technical documentation and resources