MOSFET N-CH 30V 4.5A 8SO
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Feature | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Mounting Type | Power - Max [Max] | Configuration | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STS4DNFS30 | 2 W | 10 V | 5 V | N-Channel | 330 pF | 8-SOIC | 55 mOhm | -55 °C | 150 °C | 4.7 nC | 1 V | 30 V | Schottky Diode (Isolated) | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 4.5 A | 20 V | Surface Mount | |||
STMicroelectronics STS4DPF30L | 1350 pF | 8-SOIC | 80 mOhm | -55 °C | 150 °C | 16 nC | 1 V | 30 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 4 A | Surface Mount | 2 W | 2 P-Channel | |||||||
STMicroelectronics STS4DNF60 | 315 pF | 8-SOIC | 90 mOhm | -55 °C | 150 °C | 4 V | 60 V | Logic Level Gate | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 4 A | Surface Mount | 2 W | 2 N-Channel (Dual) | 10 nC |