RN1418(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	RN1418(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	S-Mini
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Frequency - Transition
Toshiba Semiconductor and Storage RN1418(TE85L,F)	100 mA	NPN - Pre-Biased	47 kOhms	300 mV	SC-59 SOT-23-3 TO-236-3	Surface Mount	50	50 V	200 mW	10 kOhms	500 nA	S-Mini	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount S-Mini

Technical documentation and resources

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