SUD40151EL-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 40V 42A TO252AA

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 40V 42A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SUD40151EL-GE3

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	112 nC
Input Capacitance (Ciss) (Max) @ Vds	5340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SUD40151EL-GE3	4.5 V 10 V	50 W	2.5 V	-55 °C	175 ░C	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	12 mOhm	Surface Mount	112 nC	P-Channel	40 V	MOSFET (Metal Oxide)	42 A	5340 pF

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General part information

P-Channel 40 V 42A (Tc) 50W (Tc) Surface Mount TO-252AA

Technical documentation and resources