2N5416
ActiveMicrochip Technology
300 V POWER BJT TO-5 ROHS COMPLIANT: YES
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2N5416
ActiveMicrochip Technology
300 V POWER BJT TO-5 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5416 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 750 mW |
| Supplier Device Package | TO-5AA |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 16.80 | |
| 100 | $ 15.60 | |||
| Microchip Direct | N/A | 1 | $ 16.80 | |
| Newark | Each | 100 | $ 15.60 | |
| 500 | $ 15.00 | |||
2N5416-Transistor Series
MIL-PRF-19500/485
| Part | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Mounting Type | Supplier Device Package | Transistor Type | Package / Case | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce |
|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology 2N5416 | 1 A | 750 mW | Through Hole | TO-5AA | PNP | TO-205AA, TO-5-3 Metal Can | 2 V | 300 V | 1 mA | 30 |
Description
General part information
2N5416-Transistor Series
This family of 2N5415 and 2N5416 epitaxial planar PNP transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) and low profile surfacemount U4, U4 and UA packaging.
Documents
Technical documentation and resources