2SJ162-E

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Renesas Electronics Corporation

SILICIN P CHANNEL MOSFET

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Renesas Electronics Corporation

SILICIN P CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ162-E

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	160 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	900 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	100 W
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V

Silicin P Channel Mosfet

Part	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation 2SJ162-E	100 W	900 pF	TO-3P	MOSFET (Metal Oxide)	P-Channel	160 V	SC-65-3, TO-3P-3	Through Hole	10 V	15 V	150 °C	7 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The 2SJ162 is a Silicin P Channel Mosfet.

Technical documentation and resources