STPSC12H065DY

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STMicroelectronics

DIODE SIL CARB 650V 12A TO220AC

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STMicroelectronics

DIODE SIL CARB 650V 12A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC12H065DY

Capacitance @ Vr, F	600 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	120 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

DIODE SIL CARB 650V 12A TO220AC

Part	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Qualification	Supplier Device Package	Package / Case	Speed	Grade	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F
STMicroelectronics STPSC12H065DY	12 A	Through Hole	650 V	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	AEC-Q101	TO-220AC	TO-220-2	200 mA, 500 ns	Automotive	120 µA	1.75 V	600 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 12A Through Hole TO-220AC

Technical documentation and resources