CMS61P06CT-HF

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Comchip Technology

MOSFET P-CH 60V 61A TO220AB

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Comchip Technology

MOSFET P-CH 60V 61A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	CMS61P06CT-HF

Current - Continuous Drain (Id) @ 25°C	61 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	37.2 nC
Input Capacitance (Ciss) (Max) @ Vds	2165 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	171 W, 2 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET P-CH 60V 61A TO220AB

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Comchip Technology CMS61P06CT-HF	6 V, 10 V	2165 pF	61 A	P-Channel	60 V	TO-220AB	MOSFET (Metal Oxide)	-55 °C	150 °C	37.2 nC	TO-220-3	20 V	Through Hole	22 mOhm	4 V	2 W, 171 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 61A (Tc) 2W (Ta), 171W (Tc) Through Hole TO-220AB

Technical documentation and resources

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