IXFJ40N30

Obsolete

IXYS

MOSFET N-CH 300V 40A TO268

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Obsolete

IXYS

MOSFET N-CH 300V 40A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFJ40N30

Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	4800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	TO-268
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Technology	Supplier Device Package	FET Type	Mounting Type	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
IXYS IXFJ40N30	MOSFET (Metal Oxide)	TO-268	N-Channel	Through Hole	4 V	80 mOhm	TO-220-3 Short Tab	10 V	-55 °C	150 °C	300 V	20 V	4800 pF	200 nC	300 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 300 V 40A (Tc) 300W (Tc) Through Hole TO-268

Technical documentation and resources

No documents available