IXTT72N20

Obsolete

IXYS

MOSFET N-CH 200V 72A TO268

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Obsolete

IXYS

MOSFET N-CH 200V 72A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT72N20

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)
IXYS IXTT72N20	MOSFET (Metal Oxide)	10 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	4400 pF	400 W	200 V	-55 °C	150 °C	72 A	N-Channel	4 V	TO-268AA	170 nC	Surface Mount	33 mOhm	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 72A (Tc) 400W (Tc) Surface Mount TO-268AA

Technical documentation and resources

No documents available