IXTA32N20T
ObsoleteMOSFET N-CH 200V 32A TO263
IXTA32N20T
ObsoleteMOSFET N-CH 200V 32A TO263
Description
General part information
IXTA32 Series
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTA32N20T |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 32 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 38 nC |
| Input Capacitance (Ciss) (Max) | 1760 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263AA |
| Power Dissipation (Max) | 200 W |
| Rds On (Max) | 72 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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