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Infineon Technologies AG-ISC019N04NM5ATMA1 MOSFETs Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP T/R

ISC019N04NM5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

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Infineon Technologies AG-ISC019N04NM5ATMA1 MOSFETs Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP T/R

ISC019N04NM5ATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

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Description

General part information

ISC019N Series

With the OptiMOSTM5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vthin the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGSratios (CGD/CGSdivider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Technical Specifications

Parameters and characteristics for this part

SpecificationISC019N04NM5ATMA1
Current - Continuous Drain (Id) (Ta)29 A
Current - Continuous Drain (Id) (Tc)170 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)7 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)55 nC
Input Capacitance (Ciss) (Max)3900 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8 FL
Power Dissipation (Max)3 W, 100 W
Rds On (Max)1.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.4 V

Pricing

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