IXFR12N100

Obsolete

IXYS

MOSFET N-CH 1000V 10A ISOPLUS247

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Obsolete

IXYS

MOSFET N-CH 1000V 10A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR12N100

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	1000 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Through Hole
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5.5 V

Part	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package
IXYS IXFR12N100Q	TO-247-3	5.5 V	2900 pF	N-Channel	10 V	Through Hole	90 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	10 A	1.1 Ohm	20 V	1000 V	250 W	ISOPLUS247™
IXYS IXFR12N100	TO-247-3	5.5 V	2900 pF	N-Channel		Through Hole	90 nC	MOSFET (Metal Oxide)			10 A	1.1 Ohm		1000 V		ISOPLUS247™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 10A (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available