AOSP66923

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 12A 8SOIC

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 12A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AOSP66923

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1725 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Mounting Type
Alpha & Omega Semiconductor Inc. AOSP66923	2.6 V	N-Channel	1725 pF	11 mOhm	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	100 V	4.5 V 10 V	12 A	MOSFET (Metal Oxide)	35 nC	3.1 W	20 V	8-SOIC	Surface Mount

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General part information

N-Channel 100 V 12A (Ta) 3.1W (Ta) Surface Mount 8-SOIC

Technical documentation and resources