DS1270W-100

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Analog Devices Inc./Maxim Integrated

IC NVSRAM 16MBIT PARALLEL 36EDIP

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DS1270W-100

Active

Analog Devices Inc./Maxim Integrated

IC NVSRAM 16MBIT PARALLEL 36EDIP

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	DS1270W-100	DS1270W Series

Access Time	100 ns	100 - 150 ns
Memory Format	NVSRAM	NVSRAM
Memory Interface	Parallel	Parallel
Memory Organization	2 M	2 M
Memory Size	16 Mb	16 Mb
Memory Type	Non-Volatile	Non-Volatile
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	70 °C	70 - 85 °C
Operating Temperature [Min]	0 °C	-40 - 0 °C
Package / Case	36-DIP Module	36-DIP Module
Package / Case	0.61 ", 15.49 mm	0.61 - 15.49 "
Supplier Device Package	36-EDIP	36-EDIP
Technology	NVSRAM (Non-Volatile SRAM)	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	3.6 V	3.6 V
Voltage - Supply [Min]	3 V	3 V
Write Cycle Time - Word, Page	-	150 ns
Write Cycle Time - Word, Page [custom]	100 ns	100 ns
Write Cycle Time - Word, Page [custom]	100 ns	100 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

DS1270W Series

IC NVSRAM 16MBIT PARALLEL 36EDIP

Part	Package / Case	Package / Case	Mounting Type	Memory Format	Memory Interface	Technology	Memory Organization	Write Cycle Time - Word, Page	Voltage - Supply [Max]	Voltage - Supply [Min]	Access Time	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Supplier Device Package	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Analog Devices Inc./Maxim Integrated DS1270W-150	36-DIP Module	0.61 ", 15.49 mm	Through Hole	NVSRAM	Parallel	NVSRAM (Non-Volatile SRAM)	2 M	150 ns	3.6 V	3 V	150 ns	Non-Volatile	70 °C	0 °C	16 Mb	36-EDIP
Analog Devices Inc./Maxim Integrated DS1270W-100	36-DIP Module	0.61 ", 15.49 mm	Through Hole	NVSRAM	Parallel	NVSRAM (Non-Volatile SRAM)	2 M		3.6 V	3 V	100 ns	Non-Volatile	70 °C	0 °C	16 Mb	36-EDIP	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1270W-100#	36-DIP Module	0.61 ", 15.49 mm	Through Hole	NVSRAM	Parallel	NVSRAM (Non-Volatile SRAM)	2 M		3.6 V	3 V	100 ns	Non-Volatile	70 °C	0 °C	16 Mb	36-EDIP	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1270W-100IND#	36-DIP Module	0.61 ", 15.49 mm	Through Hole	NVSRAM	Parallel	NVSRAM (Non-Volatile SRAM)	2 M		3.6 V	3 V	100 ns	Non-Volatile	85 °C	-40 °C	16 Mb	36-EDIP	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1270W-100IND	36-DIP Module	0.61 ", 15.49 mm	Through Hole	NVSRAM	Parallel	NVSRAM (Non-Volatile SRAM)	2 M		3.6 V	3 V	100 ns	Non-Volatile	85 °C	-40 °C	16 Mb	36-EDIP	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1270W-150#	36-DIP Module	0.61 ", 15.49 mm	Through Hole	NVSRAM	Parallel	NVSRAM (Non-Volatile SRAM)	2 M	150 ns	3.6 V	3 V	150 ns	Non-Volatile	70 °C	0 °C	16 Mb	36-EDIP

Description

General part information

DS1270W Series

NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 100 ns 36-EDIP

Documents

Technical documentation and resources

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