IC NVSRAM 16MBIT PARALLEL 36EDIP
Part | Package / Case | Package / Case | Mounting Type | Memory Format | Memory Interface | Technology | Memory Organization | Write Cycle Time - Word, Page | Voltage - Supply [Max] | Voltage - Supply [Min] | Access Time | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Supplier Device Package | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1270W-150 | 36-DIP Module | 0.61 ", 15.49 mm | Through Hole | NVSRAM | Parallel | NVSRAM (Non-Volatile SRAM) | 2 M | 150 ns | 3.6 V | 3 V | 150 ns | Non-Volatile | 70 °C | 0 °C | 16 Mb | 36-EDIP | ||
Analog Devices Inc./Maxim Integrated DS1270W-100 | 36-DIP Module | 0.61 ", 15.49 mm | Through Hole | NVSRAM | Parallel | NVSRAM (Non-Volatile SRAM) | 2 M | 3.6 V | 3 V | 100 ns | Non-Volatile | 70 °C | 0 °C | 16 Mb | 36-EDIP | 100 ns | 100 ns | |
Analog Devices Inc./Maxim Integrated DS1270W-100# | 36-DIP Module | 0.61 ", 15.49 mm | Through Hole | NVSRAM | Parallel | NVSRAM (Non-Volatile SRAM) | 2 M | 3.6 V | 3 V | 100 ns | Non-Volatile | 70 °C | 0 °C | 16 Mb | 36-EDIP | 100 ns | 100 ns | |
Analog Devices Inc./Maxim Integrated DS1270W-100IND# | 36-DIP Module | 0.61 ", 15.49 mm | Through Hole | NVSRAM | Parallel | NVSRAM (Non-Volatile SRAM) | 2 M | 3.6 V | 3 V | 100 ns | Non-Volatile | 85 °C | -40 °C | 16 Mb | 36-EDIP | 100 ns | 100 ns | |
Analog Devices Inc./Maxim Integrated DS1270W-100IND | 36-DIP Module | 0.61 ", 15.49 mm | Through Hole | NVSRAM | Parallel | NVSRAM (Non-Volatile SRAM) | 2 M | 3.6 V | 3 V | 100 ns | Non-Volatile | 85 °C | -40 °C | 16 Mb | 36-EDIP | 100 ns | 100 ns | |
Analog Devices Inc./Maxim Integrated DS1270W-150# | 36-DIP Module | 0.61 ", 15.49 mm | Through Hole | NVSRAM | Parallel | NVSRAM (Non-Volatile SRAM) | 2 M | 150 ns | 3.6 V | 3 V | 150 ns | Non-Volatile | 70 °C | 0 °C | 16 Mb | 36-EDIP |