AOI9N50

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 9A TO251A

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 9A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI9N50

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1160 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	178 W
Rds On (Max) @ Id, Vgs	860 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOI9N50	150 °C	-50 °C	24 nC	1160 pF	860 mOhm	Through Hole	178 W	9 A	TO-251-3 Stub Leads IPAK	MOSFET (Metal Oxide)	500 V	10 V	N-Channel	4.5 V	30 V	TO-251A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$