Specification	AOI9N50

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Input Capacitance (Ciss) (Max)	1160 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-50 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Package Name	TO-251A
Power Dissipation (Max)	178 W
Rds On (Max)	860 mOhm, 860 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

AOI9 Series

Part	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Power Dissipation (Max)	FET Type	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Package Name	Vgs(th) (Max)
Alpha & Omega Semiconductor Inc. AOI9N50	9 A	860 mOhm 860 mOhm	500 V	30 V	MOSFET (Metal Oxide)	178 W	N-Channel	IPAK TO-251-3 Stub Leads	Through Hole	1160 pF	-50 °C	150 °C	10 V	24 nC 24 nC	TO-251A	4.5 V

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